Isoperiodic photosensitive Pb1-xSnx / PbS1-S heterostructures I. R. Nuriyev, N. V. Faradzhev, A. M. Nazarov, M. B. Gadzhiev Institute of Physics of the NAS of Azerbaijan 33 H. Javid av., Baku, AZ1143, Azerbaijan E-mail: afin@aport2000.ru In the present paper, peculiarities of creation of the isoperiodic p-Pb1-Sn ( = 0.03)/n-PbS1-S = 0.05) hetero-junctions and manufacturing the photosensitive elements suitable for application have been considered. <...> Photosensitive elements with high technical parameters: R0A = 1.2— 1.5 m2; max= 8 m; D* = (1—2) 1010 cm Hs1/2 W-1, which are comparable with the similar parameters obtained for Shottky diodes on the basis Pb1-SnSe, have been made. <...>