Destefanis G., Tribolet P. Advanced MCT Technologies in France // Proc. <...> Kinch M. A. 50Years of HgCdTe at Texas Instruments and Beyond // Ibid. <...> Tribolet P., Destefanis G., Ballet P., Baylet J., Gravrand O., Rothman J. Advanced HgCdTe technologies and dualband developments // Ibid. 2008. <...> Bratt P. R., Johnson S. M., Rhiger D. R., Tung T., Kalisher M. H., Radford W. A., Garwood G. A., Cockrum C. A. Historical perspectives on HgCdTe material and device development at Raytheon Vision Systems // Ibid. <...> Sellar R. G., Boreman G. D. Classification of imaging spectrometers for remote sensing applications // Optical Engineering. 2005. <...> Damnjanovi V., Ponomarenko V. P., Elazar J. M. Electrical haracteristics of HgCdTe Schottky diode photo-detectors with passivation layers transparent to free carriers // Semicond. <...> Damnjanovi V., Ponomarenko V. P., Elazar J. M. Photoelectric characteristics of HgCdTe tunnel MIS photo-detectors // Ibid. 2009. <...> P. 1—6. 90 3, 2011 Current state and new prospects of the semiconductor infrared photoelectronics M. D. Korneeva1, V. P. Ponomarenko1,2, A. M. Filachev1,2 1Orion R&P Association, 9 Kosinskaya str., Moscow, 111402, Russia E-mail: orion@orion-ir.ru 2MIPT, 9 Institute al., Dolgoprudny, Moscow region, 141700, Russia The paper discusses condition and results of development in a number of basic technologies of infrared photoelectronics: semiconductor photosensitive materials, solid-state photo converters for IR and UV regions of the electromagnetic radiation, multispectral and fast response devices, THz radiation recording devices, metamaterials and nanotechnology for creation of new types of optoelectronic devices. <...>