Particularities of forming the p-n-structures in the film polycrystalline silicon R. Aliev, E. Mukhtarov Andijan State University, 129 University str., Andijan, 710000, Uzbekistan E-mail: alievuz@yahoo.com The volt-ampere characteristics of the structures with p-n junction were investigated. <...> These structures have been were formed by means of growing the -type conductivity films, thermal diffusion and ion implantation of boron atoms into the n-type polycrystalline silicon layers. <...> The S-form of volt-ampere characteristics was revealed for the investigated structures. <...> This effect is determined by changing the conductivities of the base and grain boundaries under thermal processing. <...>