For citation: Efremov A.M., Kwon K.-H. Plasma parameters and composition in CF4/O2/Ar gas mixture. <...> Квон Александр Михайлович Ефремов ( ) Кафедра технологии приборов и материалов электронной техники, Ивановский государственный химико-технологический университет, Шереметевский просп., 7, Иваново, Российская Федерация, 153000 E-mail: efremov@isuct.ru ( ) Kwang-Ho Kwon Department of Control and Instrumentation Engineering, Korea University, Sejong 339-700, South Korea. <...> Было найдено, что замещение аргона на кислород при постоянном содержании CF4 в плазмообразующей смеси не приводит к немонотонным изменениям концентрации атомов F, как это неоднократно сообщалось для бинарных смесей CF4/O2. <...> Ключевые слова: CF4, плазма, диагностика, моделирование, кинетика реакций UDC: 537.525 A.M. Efremov, K.-H. Kwon Alexandr M. Efremov ( ) Department of Electronic Devices and Materials Technology, Ivanovo State University of Chemistry and Technology, Sheremetevsky ave., 7, Ivanovo, 153000, Russia E-mail: efremov@isuct.ru ( ) Kwang-Ho Kwon Dept. of Control and Instrumentation Engineering, Korea University, Sejong 339-700, South Korea. <...> Вып. 1 PLASMA PARAMETERS AND COMPOSITION IN CF4/O2/Ar GAS MIXTURE The effects of O2/Ar mixing ratio in CF4/O2/Ar mixture on both plasma parameters and fluxes of active species determining the dry etching kinetics in this gas system were analyzed. <...> The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. <...> It was found that the substitution of Ar with O2 at constant fraction of CF4 in a feed gas does not result in the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. <...> The mechanisms of this phenomenon as well as its possible impact on the etching/polymerization kinetics were discussed in details. <...> Key words: CF4 plasma, diagnostics, modeling, reaction kinetics INTRODUCTION Fluorocarbon (FC) gases, such as CF4 and other ones, are widely used in the microelectronic industry for dry patterning of silicon wafers and dielectric (SiO2, Si3N4) thin films [1, 2]. <...> From Refs. [2-4], it can be understood that the FC gases are frequently combined with O2 with the aim of increasing the F atoms yield <...>