Properties, processing and application of GaN and related semiconductors / Ed. by J. H. Edgar. — London: INSPEC, 1999. 6. <...> Estimation of values of electrophysical parameters of semiconductor materials by results of measurements of excitons cathodoluminescence . <...> N. Polyakov, M. A. Stepovich Kaluga State University named after K. E. Tsiolkovsky 26 Stepan Rasin str., Kaluga, 248023, Russia E-mail: andrei-polyakov@mail.ru M. Noltemeyer, T. Hempel, J. Christen Otto-von-Guericke-Universitдt-Magdeburg, 2 Universitдtsplatz, Magdeburg, 39106, Germany E-mail: martin.noltemeyer@ovgu.de Possibility of time-of-flyght cathodoluminescence measurements usage for an estimation of diffusion constant and mobility of excitons in single quantum well in direct-gap semiconductor heterostructures is shown. <...> Results of experimental researches of ZnMgO/ZnO heterostructure with ZnO quantum well that is perspective for practical usage are presented. <...> On the basis of the analysis of excitons mobility temperature dependence (4,8—180 K) assumptions of influence of quantum well border heterointerface scattering mechanisms are formulated. <...> Приведены результаты экспериментальных исследований перспективной для практического использования гете-роструктуры ZnMgO/ZnO с ZnO-квантовой ямой. <...>