Photodiodes from indium antimonide with Moss—Burshtein effect on basis of liquid-phase homoepitaxial structures V. P. Astakhov, V. V. Karpov, V. V. Karpukhin, V. F. Chishko Moscow Plant “Sapfir” 4a Dnepropetrovsky av., Moscow, 117345, Russia E-mail: ko-ckb@mail.ru A. A. Shlyonsky Giredmet 5 Big Tolmachev al., 119017, Moscow, Russia Photodiodes from indium antimonide with Moss—Burshtein effect on basis of liquid-phase homoepitaxial structures are created and investigated. <...> It is shown that such photodiodes can be applied at irradiation of the emitter (p+-layer) — side and substrate — side. <...>