Features of the band bending on the surface of graded gap Hg1-xCdxTe A. V. Predein, V. V. Vasilyev Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, 13 Lavrentyev av., Novosibirsk, 630090, Russia E-mail: alpred@thermo.isp.nsc.ru Computations were performed of potential distribution in the surface graded gap layer of p-type HgCdTe. <...> The Poisson equation was solved as non-linear integral-differential equation taking into account the nonparabolicity of conduction band. <...> The energy band diagrams were constructed for various doping level, graded gap region width and surface potential. <...> The MIS structure characteristics were computed and the conditions of inversion layer formation in planar n on p diodes, based on graded gap -HgCdTe, were determined. <...> Представлены численные расчеты распределения потенциала в поверхностном вари-зонном слое HgCdTe р-типа. <...>