Rudenko∗ Anatoly V. Chzhan† Siberian Federal University Svobodny, 79, Krasnoyarsk, 660041 Kirensky Institute of Physics Russian Academy of Sciences SB RAS Akademgorodok, 50/38, Krasnoyarsk, 660036 Russia Received 09.05.2015, received in revised form 10.06.2015, accepted 19.07.2015 Studies in the field of magnetodynamics of vortex structures are reviewed. <...> The prospects for application of ferromagnetic nanodots in high-speed nonvolatile memory are demonstrated. <...> The issue of the effect of the interaction between nanodots on the dynamic properties of nanodot arrays is raised. <...> In the process of digital magnetic recording current flowing in a recording head reverses the magnetic field direction at certain intervals. <...> As a result, under the action of the scattering field of a magnetic head some regions of a moving magnetic carrier are switched. <...> This way of data storage is nonvolatile, i.e., further data storage after switching the cells by a recording head does not require electric power. <...> Magnetic memory is characterized by high (up to ∼ 1012 bit/inch2) recording density and it is widely used in data storage devices and hard disc drives (HDD). <...> However, the rate of data exchange in such devices is limited because data recording and reading are performed by the same head. <...> An alternative is high-speed dynamic random access memory (DRAM) in which a bit of data is stored in the form of capacitor charge. <...> A memory cell is comprised of capacitor and transistor. <...> Rudenko, Anatoly V.Chzhan Magnetic Vortices in Ferromagnetic Nanodots that capacitors need to be periodically recharged. <...> Since during memory regeneration the memory access of the central processor periodically stops the average rate of data exchange is reduced. <...> This problem was solved by the development of static random access memory (SRAM) where a bit of data is stored in the form of a trigger state. <...> This memory is expensive but it has a shorter access time and lower energy consumption as compared with DRAM. <...> Transistors contained in a trigger occupy much larger area on a chip than a dynamic memory cell because a trigger consists of at least two gates with 6–8 transistors. <...> Therefore, the trigger is more expensive than the dynamic memory cell that consists of one transistor and one capacitor. <...> For this reason, despite a relatively low data <...>